Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Slow etch: Difference between revisions
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!Parameter | !Parameter | ||
|Recipe name: '''Slow Etch''' | |Recipe name: '''Slow Etch''' | ||
|Recipe name: '''Slow Etch2''' | |||
|- | |- | ||
|Coil Power [W] | |Coil Power [W] | ||
|350 | |350 | ||
|200 | |||
|- | |- | ||
|Platen Power [W] | |Platen Power [W] | ||
|25 | |25 | ||
|50 | |||
|- | |- | ||
|Platen temperature [<sup>o</sup>C] | |Platen temperature [<sup>o</sup>C] | ||
|20 | |||
|20 | |20 | ||
|- | |- | ||
|H2 flow [sccm] | |H2 flow [sccm] | ||
|15 | |||
|15 | |15 | ||
|- | |- | ||
|CF<sub>4</sub> flow [sccm] | |CF<sub>4</sub> flow [sccm] | ||
|30 | |||
|30 | |30 | ||
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|Pressure [mTorr] | |Pressure [mTorr] | ||
|3 | |3 | ||
|10 | |||
|- | |- | ||
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|Etch of SRN | |Etch of SRN | ||
|'''~43nm/min [measured 39-50 nm/min over a 6" wafer] | |'''~43nm/min [measured 39-50 nm/min over a 6" wafer] | ||
|''' | |||
|- | |- | ||
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|Etch rate of SiO2 | |Etch rate of SiO2 | ||
|'''~42nm/min [41-43 nm/min over a 6" wafer] | |'''~42nm/min [41-43 nm/min over a 6" wafer] | ||
| | |||
|- | |- | ||
|Etch rate of DUV resist] | |Etch rate of DUV resist] | ||
|'''~nm/min | |'''~nm/min | ||
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|Profile [<sup>o</sup>] | |Profile [<sup>o</sup>] | ||
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