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| Line 26: |
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| * '''Substrate pretreatment''': In many processes it is recommended to <u>[[Specific_Process_Knowledge/Lithography/Pretreatment|pretreat or prime]]</u> your wafer before spin-coating. In some <u>[[Specific_Process_Knowledge/Lithography/Coaters|spin-coaters]]</u>, these pretreatment processes are included in the spin coating of resist. | | * '''Substrate pretreatment''': In many processes it is recommended to <u>[[Specific_Process_Knowledge/Lithography/Pretreatment|pretreat or prime]]</u> your wafer before spin-coating. In some <u>[[Specific_Process_Knowledge/Lithography/Coaters|spin-coaters]]</u>, these pretreatment processes are included in the spin coating of resist. |
|
| |
|
| * '''Resist Type''': Choose the type of resist you wish to use: a list of UV lithography resist types available at DTU Nanolab can be found <u>[[Specific_Process_Knowledge/Lithography/UVLithography#Resist_Overview|on this page]]</u>. | | * '''Resist Type''': Choose the type of resist you wish to use: a list of UV lithography resist types available at DTU Nanolab can be found <u>[[Specific_Process_Knowledge/Lithography/Resist/UVresist|on this page]]</u>. |
| ** Positive tone resist: Resist exposed to UV light will be dissolved in the developer. The mask openings are an exact copy of the resist pattern which is to remain on the wafer. | | ** Positive tone resist: Resist exposed to UV light will be dissolved in the developer. The mask openings are an exact copy of the resist pattern which is to remain on the wafer. |
| ** Negative tone resist: Resist exposed to UV light will become polymerized and difficult to dissolve. The mask openings are an inverse copy of the resist pattern which is to remain on the wafer. | | ** Negative tone resist: Resist exposed to UV light will become polymerized and difficult to dissolve. The mask openings are an inverse copy of the resist pattern which is to remain on the wafer. |
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| |
|
| <br clear=all /> | | <br clear=all /> |
|
| |
| = Resist Overview =
| |
|
| |
| {|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" width="90%"
| |
| |-
| |
|
| |
| |-
| |
| |-style="background:silver; color:black"
| |
| |'''Resist'''
| |
| |width=100|'''Polarity'''
| |
| |'''Spectral sensitivity'''
| |
| |'''Manufacturer'''
| |
| |width=200|'''Comments'''
| |
| |width=100|'''Technical reports'''
| |
| |'''[[Specific_Process_Knowledge/Lithography/Coaters|Spin Coating]]'''
| |
| |'''[[Specific_Process_Knowledge/Lithography/UVExposure|Exposure]]'''
| |
| |'''[[Specific_Process_Knowledge/Lithography/Development|Developer]]'''
| |
| |'''Rinse'''
| |
| |width=100|'''Remover'''
| |
| |'''Process flows (in docx-format)'''
| |
|
| |
| |-
| |
|
| |
| |-
| |
| |-style="background:WhiteSmoke; color:black"
| |
| |'''[[Specific_Process_Knowledge/Lithography/5214E|AZ 5214E]]'''
| |
| |Positive but the image can be reversed
| |
| |310 - 420 nm
| |
| |[https://www.merckgroup.com/en/brands/pm/az-products.html Merck KGaA]
| |
|
| |
| Supplied by [https://www.microchemicals.com/ MicroChemicals GmbH]
| |
| |Can be used for both positive and image reversed (negative) processes with resist thickness between 1 and 4 µm.
| |
| |[[media:AZ5214E.pdf|AZ5214E.pdf]]
| |
|
| |
| [https://www.microchemicals.com/micro/tds_az_5214e_photoresist.pdf Photoresist AZ® 5214 E (TDS)]
| |
| |Automatic spin coater ([[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_UV|Gamma UV]] or [[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_E-beam_and_UV|Gamma e-beam & UV]])
| |
|
| |
| Manual spin coater ([[Specific_Process_Knowledge/Lithography/Coaters#Manual_Spin_Coaters|LabSpin]] or [[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_RCD8|RCD8]])
| |
| |Mask aligner ([[Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner|KS]] or [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|MA6 - 2]])
| |
|
| |
| Maskless aligner ([[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_Maskless_01|01]], [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_Maskless_02|02]] or [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_Maskless_03|03]])
| |
| |AZ 351B developer
| |
| or
| |
|
| |
| [[Specific_Process_Knowledge/Lithography/Development#Developer_TMAH_UV-lithography|AZ 726 MIF developer]]
| |
| |DI water
| |
| |Acetone or Remover 1165
| |
| |
| |
| Mask aligner:
| |
| [[media:Process_Flow_AZ5214E_pos_vers2.docx |Process_Flow_AZ5214_pos.docx]]
| |
| [[media:Process_Flow_AZ5214E_rev_vers2.docx |Process_Flow_AZ5214_rev.docx]]
| |
|
| |
| Maskless aligner:
| |
| [[media:Process_Flow_AZ5214E_MLA_pos.docx |Process_Flow_AZ5214_MLA_pos.docx]]
| |
| [[media:Process_Flow_AZ5214E_MLA_rev.docx |Process_Flow_AZ5214_MLA_rev.docx]]
| |
|
| |
| |-
| |
| |-style="background:LightGrey; color:black"
| |
| |'''[[Specific_Process_Knowledge/Lithography/4562|AZ 4562]]'''
| |
| |Positive
| |
| |310 - 440 nm
| |
| |[https://www.merckgroup.com/en/brands/pm/az-products.html Merck KGaA]
| |
|
| |
| Supplied by [https://www.microchemicals.com/ MicroChemicals GmbH]
| |
| |For process with resist thickness between 6 and 25 µm.
| |
| |[[media:AZ4500.pdf|AZ4500.pdf]]
| |
|
| |
| [https://www.microchemicals.com/micro/tds_az_4500_series.pdf Photoresist AZ® 4562 (TDS)]
| |
| |Automatic spin coater ([[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_E-beam_and_UV|Gamma e-beam & UV]])
| |
|
| |
| Manual spin coater ([[Specific_Process_Knowledge/Lithography/Coaters#Manual_Spin_Coaters|LabSpin]] or [[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_RCD8|RCD8]])
| |
| |Mask aligner ([[Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner|KS]] or [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|MA6 - 2]])
| |
|
| |
| Maskless aligner ([[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_Maskless_01|01]] or [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_Maskless_03|03]])
| |
| |AZ 351B developer
| |
| or
| |
|
| |
| [[Specific_Process_Knowledge/Lithography/Development#Developer_TMAH_UV-lithography|AZ 726 MIF developer]]
| |
| |DI water
| |
| |Acetone or Remover 1165
| |
| |
| |
| Mask aligner:
| |
| [[media:Process_Flow_thick_AZ4562_vers2.docx|Process_Flow_thick_AZ4562.docx]]
| |
|
| |
| Maskless aligner:
| |
| [[media:Process_Flow_thick_AZ4562_MLA.docx|Process_Flow_thick_AZ4562_MLA.docx]]
| |
|
| |
| |-
| |
| |-style="background:WhiteSmoke; color:black"
| |
| |'''[[Specific_Process_Knowledge/Lithography/MiR|AZ MiR 701]]'''
| |
| |Positive
| |
| |310 - 445 nm
| |
| |[https://www.merckgroup.com/en/brands/pm/az-products.html Merck KGaA]
| |
|
| |
| Supplied by [https://www.microchemicals.com/ MicroChemicals GmbH]
| |
| |High selectivity for dry etch.
| |
|
| |
| Resist thickness 1.5 - 4 µm.
| |
| |[[media:AZ_MiR_701.pdf|AZ_MiR_701.pdf]]
| |
|
| |
| [https://www.microchemicals.com/micro/tds_az_mir701_photoresist.pdf Photoresist AZ® MIR 701 (TDS)]
| |
| |Automatic spin coater ([[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_UV|Gamma UV]] or [[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_E-beam_and_UV|Gamma e-beam & UV]])
| |
|
| |
| Manual spin coater ([[Specific_Process_Knowledge/Lithography/Coaters#Manual_Spin_Coaters|LabSpin]] or [[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_RCD8|RCD8]])
| |
| |
| |
| Mask aligner ([[Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner|KS]] or [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|MA6 - 2]])
| |
|
| |
| Maskless aligner ([[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_Maskless_01|01]], [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_Maskless_02|02]] or [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_Maskless_03|03]])
| |
| |[[Specific_Process_Knowledge/Lithography/Development#Developer_TMAH_UV-lithography|AZ 726 MIF developer]]
| |
| |DI water
| |
| |Acetone or Remover 1165
| |
| |
| |
| Mask aligner:
| |
| [[media:Process_Flow_AZ_MiR701.docx|Process_Flow_AZ_MiR701.docx]]
| |
|
| |
| Maskless aligner:
| |
| [[media:Process_Flow_AZ_MiR701_MLA.docx|Process_Flow_AZ_MiR701_MLA.docx]]
| |
|
| |
| |-
| |
| |-style="background:LightGrey; color:black"
| |
| |'''[[Specific_Process_Knowledge/Lithography/nLOF|AZ nLOF 2020]]'''
| |
| |Negative
| |
| |310 - 380 nm
| |
| |[https://www.merckgroup.com/en/brands/pm/az-products.html Merck KGaA]
| |
|
| |
| Supplied by [https://www.microchemicals.com/ MicroChemicals GmbH]
| |
| |Negative sidewalls for lift-off.
| |
|
| |
| Resist thickness 1.5 - 4 µm.
| |
| |[[media:AZ_nLOF_2020.pdf|AZ_nLOF_2020.pdf]]
| |
|
| |
| [https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Photoresist AZ®nLOF 2020 (TDS)]
| |
| |Automatic spin coater ([[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_UV|Gamma UV]])
| |
|
| |
| Manual spin coater ([[Specific_Process_Knowledge/Lithography/Coaters#Manual_Spin_Coaters|LabSpin]] or [[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_RCD8|RCD8]])
| |
| |
| |
| Mask aligner ([[Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner|KS]] or [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|MA6 - 2]])
| |
|
| |
| Maskless aligner ([[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_Maskless_01|01]] or [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_Maskless_02|02]])
| |
| |[[Specific_Process_Knowledge/Lithography/Development#Developer_TMAH_UV-lithography|AZ 726 MIF developer]]
| |
| |DI water
| |
| |Remover 1165
| |
| |
| |
| Mask aligner:
| |
| [[media:Process_Flow_AZ_nLOF_2020.docx|Process_Flow_AZ_nLOF_2020.docx]]
| |
|
| |
| Maskless aligner:
| |
| [[media:Process_Flow_AZ_nLOF_2020_MLA.docx|Process_Flow_AZ_nLOF_2020_MLA.docx]]
| |
|
| |
| |-
| |
| |-style="background:WhiteSmoke; color:black"
| |
| |'''[[Specific Process Knowledge/Lithography/SU-8|SU-8]]'''
| |
| |Negative
| |
| |350 - 400 nm
| |
| |[https://kayakuam.com/products/su-8-2000/ Kayaku Advanced Materials, Inc.]
| |
|
| |
| Supplied by [http://www.microresist.com/products/ micro resist technology GmbH]
| |
| |High aspect ratio.
| |
|
| |
| Resist thickness 1 µm to several 100 µm.
| |
| |[[media:SU-8_DataSheet_2005.pdf|SU-8_DataSheet_2005.pdf]], [[media:SU-8_DataSheet_2075.pdf|SU-8_DataSheet_2075.pdf]]
| |
| |Manual spin coater ([[Specific_Process_Knowledge/Lithography/Coaters#Manual_Spin_Coaters|LabSpin]] or [[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_RCD8|RCD8]])
| |
| |
| |
| Mask aligner ([[Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner|KS]] or [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|MA6 - 2]])
| |
|
| |
| Maskless aligner ([[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_Maskless_01|01]] or [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_Maskless_02|02]])
| |
| |[[Specific_Process_Knowledge/Lithography/Development#SU8-Developer|mr-Dev 600 developer (PGMEA)]]
| |
| |IPA
| |
| |Cured SU-8 is practically insoluble.
| |
|
| |
| Plasma ashing can remove crosslinked SU-8.
| |
| |[[media:Process_Flow_SU8_70um.docx|Process_Flow_SU8_70um.docx]]
| |
|
| |
| Most of the process knowledge on SU-8 is based in research groups
| |
|
| |
| |}
| |
|
| |
|
| |
| ===Other process flows===
| |
| *[[media:Process_Flow_ChipOnCarrier.docx|Process_Flow_ChipOnCarrier.docx]]: A procedure for UV lithography on a chip using automatic coater and developer.
| |
|
| |
| <br clear="all" />
| |
|
| |
|
| =Process information= | | =Process information= |
