Specific Process Knowledge/Lithography/EBeamLithography/EBLLandingpage: Difference between revisions
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While the EBL workflow resembles that of UV lithography there are a few additional complications and the parameter space is somewhat larger. The complications all arise from using electrons rather than light for exposure. Since a beam of electrons is used for exposure the substrate must be sufficiently conductive and grounded in order not to build up a charge. If the substrate in itself is not conductive a thin metal film or other conductive surface layer must be applied to it, read more on this in the resist section. Another complication is secondary exposure from backscattered electrons. This is a much bigger topic and covered in the Proximity Effect Correction section. A generalised workflow is shown below. | While the EBL workflow resembles that of UV lithography there are a few additional complications and the parameter space is somewhat larger. The complications all arise from using electrons rather than light for exposure. Since a beam of electrons is used for exposure the substrate must be sufficiently conductive and grounded in order not to build up a charge. If the substrate in itself is not conductive a thin metal film or other conductive surface layer must be applied to it, read more on this in the resist section. Another complication is secondary exposure from backscattered electrons. This is a much bigger topic and covered in the Proximity Effect Correction section. A generalised workflow is shown below. | ||
[[File:EBLWorkflow.png| | [[File:EBLWorkflow.png|1200px|frameless|center|alt=Generalized EBL workflow.|Generalized EBL workflow.]] | ||
= E-beam resists = | = E-beam resists = | ||