Specific Process Knowledge/Lithography/Resist/UVresist: Difference between revisions
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The CDA used for the pneumatic autofocus will dehydrate the resist. To reduce this effect, the writehead is parked far away from the write area while setting up the job for at least a few minutes, before starting the exposure. | The CDA used for the pneumatic autofocus will dehydrate the resist. To reduce this effect, the writehead is parked far away from the write area while setting up the job for at least a few minutes, before starting the exposure. | ||
=Exposure dose when using AZ 351B developer (NaOH)= | ==Exposure dose when using AZ 351B developer (NaOH)== | ||
The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values. | The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values. | ||
All doses are for standard silicon wafers, unless otherwise stated. Development is done using AZ 351B developer (NaOH). | All doses are for standard silicon wafers, unless otherwise stated. Development is done using AZ 351B developer (NaOH). | ||
==KS Aligner (351B)== | ===KS Aligner (351B)=== | ||
The KS Aligner has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm. | The KS Aligner has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm. | ||