Specific Process Knowledge/Lithography/Resist/UVresist: Difference between revisions
| Line 474: | Line 474: | ||
The CDA used for the pneumatic autofocus will dehydrate the resist. To reduce this effect, the writehead is parked far away from the write area while setting up the job for at least a few minutes, before starting the exposure. | The CDA used for the pneumatic autofocus will dehydrate the resist. To reduce this effect, the writehead is parked far away from the write area while setting up the job for at least a few minutes, before starting the exposure. | ||
==Aligner: Maskless 02== | ===Aligner: Maskless 02=== | ||
The Aligner: Maskless 02 has a 375 nm laser light source, and a 405 nm laser light source, each with a FWHM of ~1 nm. | The Aligner: Maskless 02 has a 375 nm laser light source, and a 405 nm laser light source, each with a FWHM of ~1 nm. | ||