Specific Process Knowledge/Lithography/Resist/UVresist: Difference between revisions
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It is important to keep in mind that this exposure time is valid only for a specific combination of exposure source and optical sensor, as well as for a specific development process. | It is important to keep in mind that this exposure time is valid only for a specific combination of exposure source and optical sensor, as well as for a specific development process. | ||
=KS Aligner= | =Exposure dose for mask aligners= | ||
==KS Aligner== | |||
The KS Aligner has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm. Unless otherwise stated, the exposure doses given here are for standard silicon wafers. | The KS Aligner has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm. Unless otherwise stated, the exposure doses given here are for standard silicon wafers. | ||
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=Aligner: MA6 - 2= | ==Aligner: MA6 - 2== | ||
The Aligner: MA6-2 has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm. Unless otherwise stated, the exposure doses given here are for standard silicon wafers. | The Aligner: MA6-2 has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm. Unless otherwise stated, the exposure doses given here are for standard silicon wafers. | ||