Specific Process Knowledge/Thermal Process/RTP Annealsys: Difference between revisions
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* up to 1250 C | * up to 1250 C | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan=" | !style="background:silver; color:black" align="center" valign="center" rowspan="4"|Process gas | ||
|style="background:LightGrey; color:black"|Ar | |style="background:LightGrey; color:black"|Ar | ||
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*Fixed at High vacuum (2 × 10<sup>-4</sup>mbar - 10<sup>-6</sup>mbar) | *Fixed at High vacuum (2 × 10<sup>-4</sup>mbar - 10<sup>-6</sup>mbar) | ||
*Variable at Low vacuum (0.1 mbar - 2 mbar) | *Variable at Low vacuum (0.1 mbar - 2 mbar) | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Pressure | |||
|style="background:LightGrey; color:black"|Ar | |||
|style="background:WhiteSmoke; color:black"| | |||
*Secondary electron (Se2) | |||
*Inlens secondary electron (Inlens) | |||
*High Definition four quadrant Angular Selective Backscattered electron detector (HDAsB) | |||
*Variable pressure secondary electron (VPSE) | |||
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|style="background:LightGrey; color:black"|O<sub>2 | |||
|style="background:WhiteSmoke; color:black"| | |||
*X, Y: 130 × 130 mm | |||
*T: -4 to 70<sup>o</sup> | |||
*R: 360<sup>o</sup> | |||
*Z: 50 mm | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | ||