Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/ORE with Al2O3 mask: Difference between revisions
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=== Holes === | === Holes === | ||
Using patterned samples of 1 μm holes with 50 nm of Al<sub>2</sub>O<sub>3</sub>. After the tests, approximately 28nm of Al<sub>2</sub>O<sub>3</sub> were still intact. When using this recipe, by adjusting the number of cycles, approximately 10 μm were achieved maintaining a straight profile. When going for deeper profiles, 17 μm were also achieved, but the profile starts to get positive. Further work may solve the issue. | Using patterned samples of 1 μm holes with 50 nm of Al<sub>2</sub>O<sub>3</sub>. After the tests, approximately 28nm of Al<sub>2</sub>O<sub>3</sub> were still intact. When using this recipe, by adjusting the number of cycles, approximately 10 μm were achieved maintaining a straight profile. When going for deeper profiles, 17 μm were also achieved, but the profile starts to get positive. Further work may solve the issue. During the recipe, Pegasus 2 conditions were: Outer EM=10A, T=20°C, no clamping, no He BGC and all heaters OFF. | ||
[[File:holes 17 e 10 um.png|400px|left|thumb|'''''Holes profile. #144 cycles for 60 min and #288 cycles for 120 min.''''']] | [[File:holes 17 e 10 um.png|400px|left|thumb|'''''Holes profile. #144 cycles for 60 min and #288 cycles for 120 min.''''']] | ||
{| border="1" style="text-align: center; width: 900px; height: 200px" | {| border="1" style="text-align: center; width: 900px; height: 200px" | ||