Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/ORE with Al2O3 mask: Difference between revisions
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=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]= | =<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]= | ||
''By Maria Farinha @nanolab, Jan 2023'' | |||
'''''Important!''''' The pressure settings used below '''''may no longer be permitted''''', always check with the Dry etch group. | '''''Important!''''' The pressure settings used below '''''may no longer be permitted''''', always check with the Dry etch group. | ||
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<br> | <br> | ||
Moreover, during the E-step, the MFC (mass flow controller) presented a delay to read the pressure when compared with the power, creating unwanted bias. To fight it, the E-step was divided into E<sub>1</sub> and E<sub>2</sub>. The E<sub>1</sub> of only 2 s is enough to stabilize the pressure, and E<sub>2</sub> the profile is etch correctly, without the unwanted bias. | Moreover, during the E-step, the MFC (mass flow controller) presented a delay to read the pressure when compared with the power, creating unwanted bias. To fight it, the E-step was divided into E<sub>1</sub> and E<sub>2</sub>. The E<sub>1</sub> of only 2 s is enough to stabilize the pressure, and E<sub>2</sub> the profile is etch correctly, without the unwanted bias. | ||
[[File:graf bias & recipes.png|800px| | [[File:graf bias & recipes.png|800px|center|thumb|'''''CORE process graphics and recipes: a) unwanted DC bias during the E-step; b) E-step separated into two steps, E<sub>1</sub> decreased the bias.''''']] | ||
=== Pillars === | |||
[[File:compare pillars.png|600px|thumb|'''''Pillars with different etching times.''''']] | |||
{| border="1" style="text-align: center; width: 650px; height: 200px" | |||
|+ 1μm Pillar recipe from March 2022 | |||
|- | |||
|-style="background:DarkGray; color:White" | |||
! !! Time (s) !! Pressure (valve control) !! O<sub>2</sub> flow (SCCM) !! SF<sub>6</sub> flow (SCCM) !! Platen power (W) | |||
|- | |||
| '''O-step''' || 10 || 3% || 200 || 0 || 40 | |||
|- | |||
| '''R-step''' || 10 || 100% || 0 || 5 || 40 | |||
|- | |||
| '''E<sub>1</sub>-step''' || 2 || 4% || 0 || 350 || 40 | |||
|- | |||
| '''E<sub>2</sub>-step''' || 7 || 4% || 0 || 350 || 300 | |||
|} | |||
<br> | |||
=== Holes === | |||
{| border="1" style="text-align: center; width: 650px; height: 200px" | |||
|+ 1μm holes recipe from March 2022 | |||
|- | |||
|-style="background:DarkGray; color:White" | |||
! !! Time (s) !! Pressure (valve control) !! O<sub>2</sub> flow (SCCM) !! SF<sub>6</sub> flow (SCCM) !! Platen power (W) | |||
|- | |||
| '''O-step''' || || || || || | |||
|- | |||
| '''R-step''' || || || || || | |||
|- | |||
| '''E<sub>1</sub>-step''' || || || || || | |||
|- | |||
| '''E<sub>2</sub>-step''' || || || || || | |||
|} | |||
=== Nanoholes === | |||
{| border="1" style="text-align: center; width: 650px; height: 200px" | |||
|+ 200nm nanoholes recipe from March 2022 | |||
|- | |||
|-style="background:DarkGray; color:White" | |||
! !! Time (s) !! Pressure (valve control) !! O<sub>2</sub> flow (SCCM) !! SF<sub>6</sub> flow (SCCM) !! Platen power (W) | |||
|- | |||
| '''O-step''' || || || || || | |||
|- | |||
| '''R-step''' || || || || || | |||
|- | |||
| '''E<sub>1</sub>-step''' || || || || || | |||
|- | |||
| '''E<sub>2</sub>-step''' || || || || || | |||
|} | |||
=== Isotropic etch === | |||
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