Specific Process Knowledge/Thin film deposition/Deposition of Tungsten: Difference between revisions
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Wait for low base pressure (3-5 10<sup>-7</sup> Torr) | Wait for low base pressure (3-5 10<sup>-7</sup> Torr) | ||
|Deposition rate is 0.107 nm/s for 150W and 3mTorr (Src3, DC) | |Deposition rate is 0.107 nm/s for 150W and 3mTorr (Src3, DC) | ||
|Deposition rate is 0.124 nm/s for 140W and 3mTorr | |Deposition rate is 0.124 nm/s for 140W and 3mTorr (PC3, Src3 DC), | ||
(0.04 nm/s using HiPIMS - PC3, Src3) | |||
|Deposition rate is 0.083 nm/s for 150W and 3mTorr | |Deposition rate is 0.083 nm/s for 150W and 3mTorr | ||
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'''*''' ''For thicknesses above 20 nm talk to staff (write to thinfilm@nanolab.dtu.dk), as the heat and subsequent pressure rise means the deposition needs to be carried out in steps.'' | '''*''' ''For thicknesses above 20 nm talk to staff (write to thinfilm@nanolab.dtu.dk), as the heat and subsequent pressure rise means the deposition needs to be carried out in steps.'' | ||