Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions

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 | Stoichiometry
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-*Si<sub>3</sub>N<sub>4</sub>
+*SiO<sub>2</sub>
-*SRN
-SRN: Silicon Rich Nitride
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-*Si<sub>x</sub>N<sub>y</sub>H<sub>z</sub>
+*Si<sub>x</sub>O<sub>y</sub>H<sub>z</sub>
-*Si<sub>x</sub>O<sub>y</sub>N<sub>z</sub>H<sub>v</sub>
 Can be doped with boron, phosphorus or germanium
 |?
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 |Film thickness
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-*Si<sub>3</sub>N<sub>4</sub>:~50Å - ~3000Å
-*SRN: ~50Å - ~10000Å
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-*~40nm - 10µm
+*~40nm - 30µm
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 |-
 |Process Temperature
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-*800-835 <sup>o</sup>C
+*700-735 <sup>o</sup>C?
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 *300 <sup>o</sup>C
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 *Less good
+*When doped with phosphorus and/or Boron the oxide can float at about 1000 <sup>o</sup>C?
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 |-