Specific Process Knowledge/Thin film deposition/Deposition of Tungsten/Sputtering of W in Sputter Coater 3: Difference between revisions
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==X-ray Photoelectron Spectroscopy== | ==X-ray Photoelectron Spectroscopy== | ||
X-ray photoelectron spectroscopy (Instrument: XPS K- | X-ray photoelectron spectroscopy (Instrument: [[Specific Process Knowledge/Characterization/XPS/K-Alpha|XPS K-Alpha]]) has been applied to investigate the chemical content and stoichiometry. | ||
The samples used for the XPS analysis were prepared in a big glass chamber with 80mA current and a deposition time of 300s.The pressure is measured to be below 0.1 mBar. | The samples used for the XPS analysis were prepared in a big glass chamber with 80mA current and a deposition time of 300s.The pressure is measured to be below 0.1 mBar. | ||