Specific Process Knowledge/Thin film deposition/Deposition of Tungsten/Sputtering of W in Sputter Coater 3: Difference between revisions
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==SEM Inspection== | ==SEM Inspection== | ||
The samples with low aspect ratio Si trenches (500 nm deep, 200 nm wide with a pitch of 400 nm) were used to illustrate the deposition morphology (Instrument: SEM Supra | The samples with low aspect ratio Si trenches (500 nm deep, 200 nm wide with a pitch of 400 nm) were used to illustrate the deposition morphology (Instrument: [[Specific_Process_Knowledge/Characterization/SEM_Supra_1|SEM Supra 1]]). To make the result more visible it was deposited <b>twice</b> at the maximum allowed deposition time (2x300s). The SEM results are shown below. | ||