Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Slow etch: Difference between revisions
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|Etch rate of | |Etch rate of SiO2 | ||
|'''~42nm/min [41-43 nm/min over a 6" wafer] | |'''~42nm/min [41-43 nm/min over a 6" wafer] | ||
Revision as of 15:11, 6 December 2022
The slow etch
The slow etch is designed to etch slow at low powers to etch thin films and to avoid overheating of samples mounted on a carrier with Capton/polyimide tape
| Parameter | Recipe name: Slow Etch |
|---|---|
| Coil Power [W] | 350 |
| Platen Power [W] | 25 |
| Platen temperature [oC] | 20 |
| He flow [sccm] | 0 |
| CF4 flow [sccm] | 45 |
| Pressure [mTorr] | 3 |
| Typical results | Test Results |
|---|---|
| Etch of SRN | ~43nm/min [measured 39-50 nm/min over a 6" wafer] |
| Etch rate of Si3N4 | ~49nm/min [4" on carrier] |
| Etch rate of SiO2 | ~42nm/min [41-43 nm/min over a 6" wafer] |
| Etch rate of DUV resist] | ~nm/min
|
| Profile [o] |