Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Slow etch: Difference between revisions
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|Etch of | |Etch of SRN | ||
| | |'''~43nm/min [measured 39-50 nm/min over a 6" wafer] | ||
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|Etch rate of Si3N4 | |Etch rate of Si3N4 | ||
|'''~ | |'''~49nm/min [4" on carrier] | ||
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|Etch rate of Silicon | |Etch rate of Silicon | ||
|'''~nm/min | |'''~42nm/min [41-43 nm/min over a 6" wafer] | ||
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