Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Slow etch: Difference between revisions
| Line 12: | Line 12: | ||
|- | |- | ||
|Platen Power [W] | |Platen Power [W] | ||
| | |25 | ||
|- | |- | ||
| Line 24: | Line 24: | ||
|- | |- | ||
|CF<sub>4</sub> flow [sccm] | |CF<sub>4</sub> flow [sccm] | ||
| | |45 | ||
|- | |- | ||
|Pressure [mTorr] | |Pressure [mTorr] | ||
| | |3 | ||
|- | |- | ||
Revision as of 15:01, 6 December 2022
The slow etch
The slow etch is designed to etch slow at low powers to etch thin films and to avoid overheating of samples mounted on a carrier with Capton/polyimide tape
| Parameter | Recipe name: Slow Etch |
|---|---|
| Coil Power [W] | 350 |
| Platen Power [W] | 25 |
| Platen temperature [oC] | 20 |
| He flow [sccm] | 0 |
| CF4 flow [sccm] | 45 |
| Pressure [mTorr] | 3 |
| Typical results | Test Results |
|---|---|
| Etch of Si3N4 with DUV mask | |
| Etch rate of Si3N4 | ~nm/min |
| Etch rate of Silicon | ~nm/min |
| Etch rate of DUV resist] | ~nm/min
|
| Profile [o] |