Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch: Difference between revisions
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First I need to make sure that the resist work for pattering the aSi layer is good. If the resist is not good the final etch will also not be good. | First I need to make sure that the resist work for pattering the aSi layer is good. If the resist is not good the final etch will also not be good. | ||
==DUV optimization== | ===DUV optimization=== | ||
Dose test with the doses (J/m2): 200, 210, 220, 230, 240, 250, 270, 280 | Dose test with the doses (J/m2): 200, 210, 220, 230, 240, 250, 270, 280 | ||
The aim was to get good line for 400nm pitch/200nm lines | The aim was to get good line for 400nm pitch/200nm lines | ||