Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions
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Thermal oxidation can take place either by a dry process or by a wet process, depending on what furnace that is used for the oxidation. The film quality for a dry oxide is better than the film quality for a wet oxide with regards to density and dielectric constant. However, the oxidation rate is slow for dry oxidation. | Thermal oxidation can take place either by a dry process or by a wet process, depending on what furnace that is used for the oxidation. The film quality for a dry oxide is better than the film quality for a wet oxide with regards to density and dielectric constant. However, the oxidation rate is slow for dry oxidation. | ||
*Dry oxidation is used to grow 5 nm - 300 nm of oxide in the furnaces: A1, A2, A3, C1, C3, C4 and Multipurpose Anneal. | *Dry oxidation is used to grow 5 nm - 300 nm of oxide in the furnaces: A1, A2, A3, C1, C3, C4 and Multipurpose Anneal. | ||
*Wet oxidation is used to grow up to 3 µm of oxide in the furnaces: A1, A3, C1 and C3. | *Wet oxidation is used to grow up to 3 µm of oxide in the furnaces: A1, A3, C1 and C3. | ||
*Wafers with oxide layers thicker than >3 µm | *Wafers with oxide layers thicker than >3 µm can normally not be made in the cleanroom and will have to be bought (but check the wafer shop first - there might be some on stock). It is NOT allowed to oxidize the same wafers two time to get a thicker layer than 3 µm without approval | ||
Thermal oxidation can done at temperatures up to 1150 C (but only 1100 C in C1 furnace and the Multipurpose Anneal furnace). At these very high temperatures, the quartz tube in the furnaces might start to deform, so therefore the oxidation times are restricted: | Thermal oxidation can done at temperatures up to 1150 C (but only 1100 C in C1 furnace and 1050 C the Multipurpose Anneal furnace). At these very high temperatures, the quartz tube in the furnaces might start to deform, so therefore the oxidation times are restricted: | ||