Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions

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 ==Deposition of Silicon Oxide using sputter deposition technic==
 At DANCHIP you can also deposit silicon oxide using [[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]] sputter system. One of the advantages here is that you can deposite on any material you like.
+==Compare the methodes==
+{| border="1" cellspacing="0" cellpadding="3" align="center"
+!
+! LPCVD
+! PECVD
+|-
+| Stoichiometry
+|
+*Si<sub>3</sub>N<sub>4</sub>
+*SRN
+SRN: Silicon Rich Nitride
+|
+*Si<sub>x</sub>N<sub>y</sub>H<sub>z</sub>
+*Si<sub>x</sub>O<sub>y</sub>N<sub>z</sub>H<sub>v</sub>
+Can be doped with boron, phosphorus or germanium
+|-
+|Film thickness
+|
+*Si<sub>3</sub>N<sub>4</sub>:~50Å - ~3000Å
+*SRN: ~50Å - ~10000Å
+|
+*~40nm - 10µm
+|-
+|Process Temperature
+|
+*800-835 <sup>o</sup>C
+|
+*300 <sup>o</sup>C
+|-
+|Step coverage
+|
+*Good
+|
+*Less good
+|-
+|Film quality
+|
+*Dense film
+*Few defects
+|
+*Less dense film
+*Incorporation of hydrogen in the film
+|-
+|Process volume
+|
+*1-25 4" wafer per run
+*deposition on both sides of the substrate
+|
+*1-3 4" wafers or 1 6" wafer or many smaller chips per run
+*deposition on one side of the substrate
+|-
+| Substrate material allowed
+|
+*Silicon wafers
+**with layers of silicon oxide or silicon (oxy)nitride
+*Quartz wafers
+|
+*Silicon
+**with layers of silicon oxide or silicon (oxy)nitride
+*Quartz
+*Small amount of metal (in PECVD3)
+|-
+|}