Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions
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==Deposition of Silicon Oxide using PECVD== | ==Deposition of Silicon Oxide using PECVD== | ||
PECVD oxide can be deposited in one of the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] systems. You can run 1-3 wafers at a time depending on which one of the PECVD's you use. The deposition takes place at 300 degrees Celcius. This can be of importance for some applications but it gives a less dense film and the oxide is expected to have some hydrogen incorporated. The step coverage and thickness uniformity of the film is not as good as for the LPCVD TEOS oxide. PECVD oxide has excellent floating properties when doped with boron and/or phosphorus. Then it can be used ex. as top cladding for waveguides or encapsulation of various structures/components. In one of our PECVD systems (PECVD3) we allow small amounts of metal on the wafers entering the system, this is not allowed in the LPCVD and in the other PECVD (PECVD1). It is also a possibility to dope the silicon oxide with Germanium for altering the refractive index of the oxide. | PECVD oxide can be deposited in one of the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] systems. You can run 1-3 wafers at a time depending on which one of the PECVD's you use. The deposition takes place at 300 degrees Celcius. This can be of importance for some applications but it gives a less dense film and the oxide is expected to have some hydrogen incorporated. The step coverage and thickness uniformity of the film is not as good as for the LPCVD TEOS oxide. PECVD oxide has excellent floating properties when doped with boron and/or phosphorus. Then it can be used ex. as top cladding for waveguides or encapsulation of various structures/components. In one of our PECVD systems (PECVD3) we allow small amounts of metal on the wafers entering the system, this is not allowed in the LPCVD and in the other PECVD (PECVD1). It is also a possibility to dope the silicon oxide with Germanium for altering the refractive index of the oxide. | ||
==Deposition of Silicon Oxide using sputter deposition technic== | |||
At DANCHIP you can also deposit silicon oxide using [[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]] sputter system. One of the advantages here is that you can deposite on any material you like. | |||