Jump to content

Specific Process Knowledge/Etch/ICP Metal Etcher/Chromium: Difference between revisions

Bghe (talk | contribs)
No edit summary
Bghe (talk | contribs)
No edit summary
Line 2: Line 2:




===Chromium etch in ICP metal - small substrate using carrier===
==Chromium etch in ICP metal - small substrate using carrier==
The Chromium etch was carried out on the following substrate stack:
The Chromium etch was carried out on the following substrate stack:
2" Si wafer with Cr laying in a 6" Si wafer with a 4" recess. The area outside the recess was covered by AZ resist.
2" Si wafer with Cr laying in a 6" Si wafer with a 4" recess. The area outside the recess was covered by AZ resist.
Line 57: Line 57:
<br>
<br>


===Chromium etch in ICP metal on a thick glass substrate===
==Chromium etch of hardmask for silicon nitride etching by Anders Simonson@nbi.ku==
''Added by bghe@Nanolab''
 
 
==Chromium etch in ICP metal on a thick glass substrate==
The Chromium etch has ONLY been carried out on the following substrate stack:
The Chromium etch has ONLY been carried out on the following substrate stack:
The Chromium is sputter deposited onto a 2" quartz wafer and patterned by e-beam with Zep520A resist.
The Chromium is sputter deposited onto a 2" quartz wafer and patterned by e-beam with Zep520A resist.