Specific Process Knowledge/Thin film deposition/ALD Picosun R200: Difference between revisions
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*[[/Al2O3 deposition using ALD|Al<sub>2</sub>O<sub>3</sub> deposition using ALD 1]] | *[[/Al2O3 deposition using ALD|Al<sub>2</sub>O<sub>3</sub> deposition using ALD 1]] | ||
*[[/TiO2 deposition using ALD|TiO<sub>2</sub> deposition using ALD 1]] | *[[/TiO2 deposition using ALD|TiO<sub>2</sub> deposition using ALD 1]] | ||
*[[/ZnO deposition using ALD|ZnO deposition using ALD 1]] | *[[/ZnO deposition using ALD|ZnO deposition using ALD 1. ''Obsolete - ZnO should now be deposited in ALD2'']] | ||
*[[/AZO deposition using ALD|Al-doped ZnO (AZO) deposition using ALD 1]] | *[[/AZO deposition using ALD|Al-doped ZnO (AZO) deposition using ALD 1. ''Obsolete - AZO should now be deposited in ALD2'']] | ||
<!--*[[/HfO2 deposition using ALD|HfO<sub>2</sub> deposition using ALD 1]]--> | <!--*[[/HfO2 deposition using ALD|HfO<sub>2</sub> deposition using ALD 1]]--> | ||
*[[/HfO2 deposition using ALD new page|HfO<sub>2</sub> deposition using ALD 1]] | *[[/HfO2 deposition using ALD new page|HfO<sub>2</sub> deposition using ALD 1]] | ||