Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions

Revision as of 08:10, 8 September 2022 view source Thope (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231 2,179 edits →E-beam resists ← Older edit		Revision as of 08:11, 8 September 2022 view source Thope (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231 2,179 edits →Development Newer edit →
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	= Development =		= Development =

	AR 600-546 and ZED N-50 developers are available in a semi automatic puddle developer '''[[Specific_Process_Knowledge/Lithography/Development#Developer:_E-beam\|Developer E-beam]]''' in E-4, mainly intended for development of AR-P 6200 and ZEP 520A. It has automatic recipes for puddle development cycles for 10, 30 and 60 seconds of either of the two developers, each finishing off with an IPA rinse and drying cycle.		AR 600-546 and ZED N-50 developers are available in a semi automatic puddle developer '''[[Specific_Process_Knowledge/Lithography/Development#Developer:_E-beam\|Developer E-beam]]''' in E-4, mainly intended for development of AR-P 6200 and ZEP 520A. It has automatic recipes for puddle development cycles for 10, 30 and 60 seconds of either of the two developers, each finishing off with an IPA rinse and drying cycle. The system can handle chips, 2", 4" and 6" wafers.