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<span style="font-size: 90%; text-align: right;">[[Specific_Process_Knowledge/Lithography/EBeamLithography#top|Go to top of this page]]</span>
<span style="font-size: 90%; text-align: right;">[[Specific_Process_Knowledge/Lithography/EBeamLithography#top|Go to top of this page]]</span>


== E-beam resists in the cleanroom ==
== E-beam resists and process guidelines ==


[[File:bottle.jpg|150px|right]]
DTU Nanolab offers a limited number of standard EBL resist for our users. Our standard resist and process guidelines are summarized below.


We recommend all groups or users to have their own bottle of e-beam resist inside the cleanroom.
* Find a blue-capped glass bottle in the cupboard next to office 055 in 346 (outside the cleanroom).
* Bring the bottle inside gowning; clean it thoroughly '''on the outside''' with water or alcohol
* Bring the bottle to a fumehood inside the cleanroom; clean the bottle and the lid thoroughly '''on the inside''' with the main solvent of your resist. For CSAR, ZEP, mr EBL, and most PMMAs, it is anisole. If in doubt which solvent your e-beam resist contains, read the MSDS of the resist to be found [http://kemibrug.dk/searchpage/ here].
* If you need to dilute the resist, find a measurement beaker and clean it thoroughly in same solvent as your own bottle. For CSAR, ZEP, mr EBL, and anisole-based PMMA, you can use the measurement beaker in the box inside the fumehood in E-4.
* Let the bottle dry in the fumehood.
* Bring the (main) bottle of resist to the fumehood. Carefully unscrew the lid of the resist bottle. '''If necessary, wipe the thread of the resist bottle before you pour resist into your own bottle'''; dried resists may sit on the thread and be transferred into your bottle (or worse into the large resist bottle) when pouring.
* Clean all bottles on the outside with acetone or IPA, let them fume off in the fumehood. Clean the measurement beaker as well.
* Find a label to your resist bottle; bottles without labels will be removed from the cleanroom.
* Write name, Lotnumber, group and date on your bottle.
When spin coating e-beam resist, you should use a pipette to transfer resist from your bottle to the substrate. If you pour the resist directly from your bottle, you will leave resist in the thread that will soon dry out and leave particles in the resist.
The disposable pipettes need to be thoroughly cleaned with a N2 gun before use (app. 20 s). After some practice, you can obtain particle-free 4" wafers if bottle and pipette (and spin coater) are properly cleaned.
<br>
Keep your resist bottles in up-right position, do not tilt or shake them too much, this can spread particles from the sidewall into the resist.
<br>
== E-beam resists and Process flow ==
The table describes the e-beam resist used in the cleanroom for standard e-beam exposure. Some of resists are not provided by DTU Nanolab and some are not yet approved for common use in the cleanroom and are currently being tested. If you wish to test some of these resists or other resists, please contact [mailto:lithography@nanolab.dtu.dk Lithography].
Standard DTU Nanolab resists purchased and tested by DTU Nanolab:


{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" width="95%"
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" width="95%"
Line 180: Line 155:
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|'''[[Specific_Process_Knowledge/Lithography/CSAR|CSAR]]'''
|'''[[Specific_Process_Knowledge/Lithography/CSAR|CSAR AR-P 6200]]'''
|Positive
|Positive
|[http://www.allresist.com AllResist]
|[http://www.allresist.com AllResist]
Line 192: Line 167:
|[[media:Process_Flow_CSAR.docx‎|Process Flow CSAR.docx‎]] <br> [[media:Process Flow CSAR ESPACER.docx|Process Flow CSAR with ESPACER]] <br> [[media:Process Flow CSAR with Al.docx|Process Flow CSAR with Al]] <br> [[media:Process_Flow_LOR5A_CSAR_Developer_TMAH_Manual.docx|Process Flow LOR5A with CSAR]] <br>  
|[[media:Process_Flow_CSAR.docx‎|Process Flow CSAR.docx‎]] <br> [[media:Process Flow CSAR ESPACER.docx|Process Flow CSAR with ESPACER]] <br> [[media:Process Flow CSAR with Al.docx|Process Flow CSAR with Al]] <br> [[media:Process_Flow_LOR5A_CSAR_Developer_TMAH_Manual.docx|Process Flow LOR5A with CSAR]] <br>  


|-
|-style="background:LightGrey; color:black"
|'''[[Specific_Process_Knowledge/Lithography/ARN8200|Medusa AR-N 8200]]'''
|Negative
|[http://www.allresist.com AllResist]
|Both e-beam and DUV sensitive resist.
|
|
|
|AR 300-47
|H2O
|
|
|-
|-style="background:LightGrey; color:black"
|'''AR-N 7500.18'''
|Negative
|[http://www.allresist.com AllResist]
|Both e-beam, DUV and UV-sensitive resist. Currently being tested, contact [mailto:thope@dtu.dk Thomas Pedersen] for information.
|[[media:ARN7500.pdf‎|ARN7500.pdf‎]]
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u>
|PGMEA
|MIF726
|H2O
|
|
|}
It is possible to obtain permission to user other resists at DTU Nanolab, users must however provide these resists and possibly developers themselves. A non-exhaustive list of user supplied EBL resist used at DTU Nanolab and some process guidelines can be found in the table below.
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" width="95%"
|-
|-
|-style="background:silver; color:black"
|'''Resist'''
|'''Polarity'''
|'''Manufacturer'''
|'''Comments'''
|'''Technical reports'''
|'''Spin Coater'''
|'''Thinner'''
|'''Developer'''
|'''Rinse'''
|'''Remover'''
|'''Process flows (in docx-format)'''
|-


|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
|'''[[Specific_Process_Knowledge/Lithography/ZEP520A|ZEP520A]]''' (not supplied by Nanolab anymore)
|'''[[Specific_Process_Knowledge/Lithography/ZEP520A|ZEP520A]]'''
|Positive resist, contact [mailto:Lithography@Nanolab.dtu.dk Lithography] if you plan to use this resist
|Positive resist, contact [mailto:Lithography@Nanolab.dtu.dk Lithography] if you plan to use this resist
|ZEON
|ZEON
Line 206: Line 233:
|acetone/1165
|acetone/1165
|[[media:Process_Flow_ZEP.docx|Process_Flow_ZEP.docx]]
|[[media:Process_Flow_ZEP.docx|Process_Flow_ZEP.docx]]




Line 237: Line 262:
|mr REM
|mr REM
|[[media:Process_Flow_mrEBL6000.docx‎|Process_Flow_mrEBL6000.docx‎]]
|[[media:Process_Flow_mrEBL6000.docx‎|Process_Flow_mrEBL6000.docx‎]]


|-
|-
Line 279: Line 302:
|PGMEA
|PGMEA
|AR 300-47, TMAH
|AR 300-47, TMAH
|H2O
|
|
|-
|-style="background:WhiteSmoke; color:black"
|'''[[Specific_Process_Knowledge/Lithography/PMMA|PMMA]]'''
|Positive
| [http://www.allresist.com AllResist]
|We have various types of PMMA in the cleanroom. Please contact [mailto:Lithography@nanolab.dtu.dk Lithography] for information.
|
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u>
|Anisole
|MIBK:IPA (1:3), IPA:H2O
|IPA
|acetone/1165/Pirahna
|
|-
|-style="background:LightGrey; color:black"
|'''ZEP7000'''
|Positive
|ZEON
|Not approved. Low dose to clear, can be used for trilayer (PEC-free) resist-stack. Please contact [mailto:Lithography@nanolab.dtu.dk Lithography] for information.
|[[media:ZEP7000.pdf|ZEP7000.pdf]]
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u>
|Anisole
|ZED-500/Hexyl Acetate,n-amyl acetate, oxylene.
|IPA
|acetone/1165
|Trilayer stack: [[media:Process_Flow_Trilayer_Ebeam_Resist.docx‎|Process_Flow_Trilayer_Ebeam_Resist.docx‎]]
|-
|-style="background:LightGrey; color:black"
|'''AR-N 7500.18'''
|Negative
|[http://www.allresist.com AllResist]
|Both e-beam, DUV and UV-sensitive resist. Currently being tested, contact [mailto:thope@dtu.dk Thomas Pedersen] for information.
|[[media:ARN7500.pdf‎|ARN7500.pdf‎]]
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u>
|PGMEA
|MIF726
|H2O
|H2O
|
|
Line 285: Line 351:


|}
|}


Non-standard DTU Nanolab resists not purchased by DTU Nanolab:
Non-standard DTU Nanolab resists not purchased by DTU Nanolab:
Line 364: Line 429:
<br/>
<br/>
<br/>
<br/>
== E-beam resists in the cleanroom ==
[[File:bottle.jpg|150px|right]]
We recommend all groups or users to have their own bottle of e-beam resist inside the cleanroom.
* Find a blue-capped glass bottle in the cupboard next to office 055 in 346 (outside the cleanroom).
* Bring the bottle inside gowning; clean it thoroughly '''on the outside''' with water or alcohol
* Bring the bottle to a fumehood inside the cleanroom; clean the bottle and the lid thoroughly '''on the inside''' with the main solvent of your resist. For CSAR, ZEP, mr EBL, and most PMMAs, it is anisole. If in doubt which solvent your e-beam resist contains, read the MSDS of the resist to be found [http://kemibrug.dk/searchpage/ here].
* If you need to dilute the resist, find a measurement beaker and clean it thoroughly in same solvent as your own bottle. For CSAR, ZEP, mr EBL, and anisole-based PMMA, you can use the measurement beaker in the box inside the fumehood in E-4.
* Let the bottle dry in the fumehood.
* Bring the (main) bottle of resist to the fumehood. Carefully unscrew the lid of the resist bottle. '''If necessary, wipe the thread of the resist bottle before you pour resist into your own bottle'''; dried resists may sit on the thread and be transferred into your bottle (or worse into the large resist bottle) when pouring.
* Clean all bottles on the outside with acetone or IPA, let them fume off in the fumehood. Clean the measurement beaker as well.
* Find a label to your resist bottle; bottles without labels will be removed from the cleanroom.
* Write name, Lotnumber, group and date on your bottle.
When spin coating e-beam resist, you should use a pipette to transfer resist from your bottle to the substrate. If you pour the resist directly from your bottle, you will leave resist in the thread that will soon dry out and leave particles in the resist.
The disposable pipettes need to be thoroughly cleaned with a N2 gun before use (app. 20 s). After some practice, you can obtain particle-free 4" wafers if bottle and pipette (and spin coater) are properly cleaned.
<br>
Keep your resist bottles in up-right position, do not tilt or shake them too much, this can spread particles from the sidewall into the resist.
<br>


= Development =
= Development =
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/EBeamLithography"