Specific Process Knowledge/Thin film deposition/Deposition of Aluminium Nitride: Difference between revisions
→Comparison of the methods for deposition of AlN: Added sputter-system metal-nitride(PC3) |
|||
| Line 53: | Line 53: | ||
!Deposition rate | !Deposition rate | ||
| | | | ||
* | * 0.055 nm/s (Power: 300W, pressure:1 mTorr, temp.: 400C, N2 ratio: 50%) | ||
| | | | ||
* at least 0.5 nm/s ([[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard recipe performance|see conditions]]) | * at least 0.5 nm/s ([[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard recipe performance|see conditions]]) | ||