Specific Process Knowledge/Thin film deposition/Deposition of Titanium Nitride: Difference between revisions
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* 0.0232 nm/cycle on a high aspect ratio structures | * 0.0232 nm/cycle on a high aspect ratio structures | ||
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* | * about 7 nm/min, depends on sputtering parameters, check processlog in LabManager | ||
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* up to 0.0625 nm/s on a flat sample | * up to 0.0625 nm/s on a flat sample |
Revision as of 14:11, 30 August 2022
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Deposition of Titanium Nitride
Thin films of Titanium Nitride (TiN) can be deposited by either ALD or reactive sputtering. If sputtering is used, the target is Ti and nitrogen (N2) is added as reactive gas to the chamber resulting the formation of Titanium Nitride on the sample. The process information is available below:
Comparison between sputtering and ALD methods for deposition of Titanium Nitride.
ALD2 | Sputter-System Metal-Oxide (PC1)/Sputter-System Metal-Nitride (PC3) | Sputter-System(Lesker) | |
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Generel description |
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Stoichiometry |
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Film Thickness |
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Deposition rate |
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Step coverage |
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Process Temperature |
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Substrate size |
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Allowed materials |
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