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Specific Process Knowledge/Etch/III-V RIE/III V RIE ETCHES: Difference between revisions

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A plasma with a gas mixture of CHF<sub>3</sub> and O<sub>2</sub> is used to etch SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub> dielectricas; flour radicals are responsible for etching the dielectrica while oxygen removes the polymer that is formed during the etch. The polymer deposition rate and SiO<sub>2</sub>  etch rate are very sensitive to the flow ratio of CHF<sub>3</sub>  and O<sub>2</sub> . The current processes have been optimized from this point of view.
A plasma with a gas mixture of CHF<sub>3</sub> and O<sub>2</sub> is used to etch SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub> dielectricas; flour radicals are responsible for etching the dielectrica while oxygen removes the polymer that is formed during the etch. The polymer deposition rate and SiO<sub>2</sub>  etch rate are very sensitive to the flow ratio of CHF<sub>3</sub>  and O<sub>2</sub> . The current processes have been optimized from this point of view.


There are 3 standard programs:
There are 4 standard programs:




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