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Specific Process Knowledge/Characterization/PL mapper: Difference between revisions

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[[Image:PL-mapper.jpg|500px|right|thumb|Positioned in the MOCVD room: F-1]]
[[Image:PL-mapper.jpg|500px|right|thumb|Positioned in the MOCVD room: F-1]]


Photoluminiscence mapping is a non-contact, non-destructive technique for mapping out uniformity of alloy composition, material quality and defects in substrates and of III-V epiwafers. The Rapid Photoluminiscence Mapper (RPM) is equipped with 3 lasers for PL measurements and a white-light source to map out thickness and reflectance of eg layers, microcavities and VCSELs.
Photoluminescence mapping is a non-contact, non-destructive technique for mapping out uniformity of alloy composition, material quality and defects in substrates and of III-V epiwafers. The Rapid Photoluminiscence Mapper (RPM) is equipped with 3 lasers for PL measurements and a white-light source to map out thickness and reflectance of eg layers, microcavities and VCSELs.


[[Image:Wafer-bonding PL-mapper (LabAdviser) Jehem.jpg|500px|right|thumb|Map of two bonded silicon wafers. Red areas are voids between the wafers]]
[[Image:Wafer-bonding PL-mapper (LabAdviser) Jehem.jpg|500px|right|thumb|Map of two bonded silicon wafers. Red areas are voids between the wafers]]
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