Specific Process Knowledge/Lithography/EBeamLithography/eLINE: Difference between revisions
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==Writefields== | ==Writefields== | ||
[[Image:WF_imagescan.png|500x500px|right|thumb|WF alignment by image scan.]] | |||
[[Image:WF_linescan.png|500x500px|right|thumb|WF alignment by line scan.]] | |||
Writefield (WF) dimension is a trade off between beam shot precision and field stitching. The maximum writefield size is 1000x1000 µm. The beam controller has a limit of 50k addressable positions along each axis and hence for a 1000x1000 µm writefield the minimum beam position grid (pitch) is 20 nm. For a 100x100 µm writefield the minimum beam pitch is 2 nm. Thus the precision is higher for smaller writing fields. Smaller writing fields will however fracture a design into more fields and create more field boundaries with higher potential for stitching errors. | Writefield (WF) dimension is a trade off between beam shot precision and field stitching. The maximum writefield size is 1000x1000 µm. The beam controller has a limit of 50k addressable positions along each axis and hence for a 1000x1000 µm writefield the minimum beam position grid (pitch) is 20 nm. For a 100x100 µm writefield the minimum beam pitch is 2 nm. Thus the precision is higher for smaller writing fields. Smaller writing fields will however fracture a design into more fields and create more field boundaries with higher potential for stitching errors. | ||
To minimize stitching errors it is important to perform WF alignment. This can be done either by | To minimize stitching errors it is important to perform WF alignment. This can be done either by | ||