Specific Process Knowledge/Lithography/EBeamLithography/eLINE: Difference between revisions
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===Table of dose to clear (area or curved elements) on Si substrate=== | ===Table of dose to clear (area or curved elements) on Si substrate=== | ||
The following table is merely at guideline to as to what sort of dose requirements to expect. Actual dose for your design will depend on substrate type and material, resist thickness, acceleration voltage, pattern density (proximity effects) and several other factors and thus users should always do a dose test with their actual pattern. Be aware that AR-N 8200 is in particular very dependent on PEB processing parameters. Refer to [[Specific_Process_Knowledge/Lithography/ARN8200|AR-N 8200 page]] for more information. | The following table is merely at guideline to as to what sort of dose requirements to expect. Actual dose for your design will depend on substrate type and material, resist thickness, acceleration voltage, pattern density (proximity effects) and several other factors and thus users should always do a dose test with their actual pattern. Be aware that AR-N 8200 is in particular very dependent on PEB processing parameters. Refer to [[Specific_Process_Knowledge/Lithography/ARN8200|AR-N 8200 page]] for more information. | ||
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==Typical beam currents== | ==Typical beam currents== | ||
Beam current is a function of acceleration voltage and aperture and thus beam current is locked by the choice of acceleration voltage and aperture. Typical beam currents are given in the table below. The High Current (HC) mode can be activated in the Column Control panel. | Beam current is a function of acceleration voltage and aperture and thus beam current is locked by the choice of acceleration voltage and aperture. Typical beam currents are given in the table below. The High Current (HC) mode can be activated in the Column Control panel. | ||