Specific Process Knowledge/Lithography/EBeamLithography/eLINE: Difference between revisions

@@ Line 14: / Line 14: @@
 {| border="2" cellspacing="1" cellpadding="1" align="center"
-! style="background:silver; color:black" colspan="4" | Typical beam current [pA] as function of acceleration voltage and aperture]
+! style="background:silver; color:black" colspan="7" | Typical beam current [pA] as function of acceleration voltage and aperture]
 |- valign="top"
 ! style="background:silver; color:black" | Acc. voltage / Aperture
-! style="background:silver; color:black" | 10
+! style="background:silver; color:black" | 7 µm
-! style="background:silver; color:black" | 10 HC
+! style="background:silver; color:black" | 10 µm
-! style="background:silver; color:black" | 20
+! style="background:silver; color:black" | 15 µm
-! style="background:silver; color:black" | 20 HC
+! style="background:silver; color:black" | 20 µm
-! style="background:silver; color:black" | 30
+! style="background:silver; color:black" | 30 µm
-! style="background:silver; color:black" | 30 HC
+! style="background:silver; color:black" | 60 µm
+! style="background:silver; color:black" | 120 µm
 |- valign="top"
 ! style="background:lightgrey; color:black" | 10 kV