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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using LPCVD TEOS: Difference between revisions

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==Using LPCVD TEOS as a masking material for KOH etching==
==Using LPCVD TEOS as a masking material for KOH etching==
It is possible to use TEOS as a masking layer in KOH etch however it is not as suitable as Silicon nitride for deep KOH etching. However for shallower etches it can be used. In comparison to silicon nitride TEOS has the advantage that it does not have the same pinhole problems.
 
It is possible to use LPCVD TEOS pxide as a masking layer for KOH etching. However, it is not as suitable as LPCVD silicon nitride for deep KOH etching, as the the etch rate for TEOS oxide is higher than the etch rate for silicon nitride.
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