Specific Process Knowledge/Etch/Etching of Silicon Nitride: Difference between revisions
m →Compare the methods for Silicon Nitride etching: nm to Å for comparability |
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*PECVD nitride: ~400-1000 Å/min | *PECVD nitride: ~400-1000 Å/min | ||
*Stoichiometric LPCVD nitride: ~ | *Stoichiometric LPCVD nitride: ~0.65-8 nm/min (''Yannick Seis, KU, 2019'') | ||
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*Probably betweeb 20-300 nm/min depending on the process parameters | *Probably betweeb 20-300 nm/min depending on the process parameters | ||