Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch with ICP Metal: Difference between revisions

Revision as of 13:45, 4 August 2022

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Parameter	Recipe name: no name (testing recipe)
Coil Power [W]	1200
Platen Power [W]	200
Platen temperature [^oC]	0
BCl3 flow [sccm]	60
Cl₂ flow [sccm]	30
Pressure [mTorr]	4

Material to be etched	Etch rate using the above parameters
Al2O3	~93nm/min (30s, 1/4 wafer on 6" carrier) 2017-01-20 bghe@nanolab

Revision as of 13:43, 20 June 2022 view source Sanvis (talk \| contribs) NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231 4 edits No edit summary ← Older edit		Revision as of 13:45, 4 August 2022 view source Bghe (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators 7,301 edits No edit summary Newer edit →
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	==Al2O3 etching by sanvis@nanolab==		==Al2O3 etching by sanvis@nanolab==

			==Al2O3 etching by bghe@nanolab==