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Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
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Thope (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
2,179 edits
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|style="background:LightGrey; color:black"|Beam current range
|style="background:LightGrey; color:black"|Beam current range
|style="background:WhiteSmoke; color:black"|0.1nA to 60nA in normal conditions
|style="background:WhiteSmoke; color:black"|0.22 nA to 100 nA
|style="background:WhiteSmoke; color:black"|0.01 to 12 nA<sup>a</sup>
|style="background:WhiteSmoke; color:black"|0.01 to 12 nA<sup>a</sup>
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*Wafers with layers of metal
*Wafers with layers of metal
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<sup>a</sup> The Raith tool with the attached LEO SEM allows ample freedom in the choice of most parameters. The limits indicated here refer to best cases and may be further constrained by your current selection of microscope and patterning parameters.
<sup>b</sup> For all applicable purposes.
<br clear="all" />


= E-beam resists =
= E-beam resists =
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