Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions
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!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment | !colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment | ||
|style="background:silver; color:black;" align="left"|'''[[Specific_Process_Knowledge/Lithography/EBeamLithography/JEOL_JBX-9500FSZ|JEOL JBX-9500FSZ]]''' | |style="background:silver; color:black;" align="left"|'''[[Specific_Process_Knowledge/Lithography/EBeamLithography/JEOL_JBX-9500FSZ|JEOL JBX-9500FSZ]]''' | ||
|style="background:silver; color:black;" align="left"|'''[[Specific_Process_Knowledge/Lithography/EBeamLithography/ | |style="background:silver; color:black;" align="left"|'''[[Specific_Process_Knowledge/Lithography/EBeamLithography/eLINE]]''' | ||
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|style="background:LightGrey; color:black"|Resolution | |style="background:LightGrey; color:black"|Resolution | ||
|style="background:WhiteSmoke; color:black"|~5 nm beam diameter, ~10 nm lines obtained in 50 nm thick resist (CSAR), 7 nm in HSQ | |style="background:WhiteSmoke; color:black"|~5 nm beam diameter, ~10 nm lines obtained in 50 nm thick resist (CSAR), 7 nm in HSQ | ||
|style="background:WhiteSmoke; color:black"|~ | |style="background:WhiteSmoke; color:black"|~35 nm lines obtained in 180 nm thick resist (CSAR) | ||
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|style="background:LightGrey; color:black"|Maximum writing area without stitching | |style="background:LightGrey; color:black"|Maximum writing area without stitching | ||
|style="background:WhiteSmoke; color:black"|1mm x 1mm | |style="background:WhiteSmoke; color:black"|1mm x 1mm | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"|1mm x 1mm<sup>a</sup> | ||
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|style="background:LightGrey; color:black"|E-beam voltage | |style="background:LightGrey; color:black"|E-beam voltage | ||
|style="background:WhiteSmoke; color:black"|100 kV | |style="background:WhiteSmoke; color:black"|100 kV | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"|1-30 kV | ||
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|style="background:LightGrey; color:black"|Scanning speed | |style="background:LightGrey; color:black"|Scanning speed | ||
|style="background:WhiteSmoke; color:black"|100 MHz | |style="background:WhiteSmoke; color:black"|100 MHz | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"|20 MHz | ||
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|style="background:LightGrey; color:black"|Min. electron beam size | |style="background:LightGrey; color:black"|Min. electron beam size | ||
|style="background:WhiteSmoke; color:black"|4 nm | |style="background:WhiteSmoke; color:black"|4 nm | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"|4 nm | ||
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|style="background:LightGrey; color:black"|Beam current range | |style="background:LightGrey; color:black"|Beam current range | ||
|style="background:WhiteSmoke; color:black"|0.1nA to 60nA in normal conditions | |style="background:WhiteSmoke; color:black"|0.1nA to 60nA in normal conditions | ||
|style="background:WhiteSmoke; color:black"|0.01 to | |style="background:WhiteSmoke; color:black"|0.01 to 12 nA<sup>a</sup> | ||
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|style="background:LightGrey; color:black"|Dose range | |style="background:LightGrey; color:black"|Dose range | ||
|style="background:WhiteSmoke; color:black"| 0.001 - 100000µC/cm<sup>2</sup> | |style="background:WhiteSmoke; color:black"| 0.001 - 100000µC/cm<sup>2</sup> | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| ? | ||
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