Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch with ICP Metal: Difference between revisions

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==Al2O3 etching by sanvis@nanolab==
 


|Pressure [mTorr]
|Pressure [mTorr]
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==Al2O3 etching by sanvis@nanolab==

Revision as of 13:43, 20 June 2022

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Al2O3 etching with the ICP metal

Parameter Recipe name: no name (testing recipe)
Coil Power [W] 1200
Platen Power [W] 200
Platen temperature [oC] 0
BCl3 flow [sccm] 60
Cl2 flow [sccm] 30
Pressure [mTorr] 4


Material to be etched Etch rate using the above parameters
Al2O3
  • ~93nm/min (30s, 1/4 wafer on 6" carrier)
    2017-01-20 bghe@nanolab


Al2O3 etching by sanvis@nanolab

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