Specific Process Knowledge/Lithography/EBeamLithography/eLINE: Difference between revisions
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! style="background:lightgrey; color:black" | 10 kV | ! style="background:lightgrey; color:black" | 10 kV | ||
| style="background:lightgrey; color:black" | | | style="background:lightgrey; color:black" | 30 | ||
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! style="background:Whitesmoke; color:black" | 20 kV | ! style="background:Whitesmoke; color:black" | 20 kV | ||
! style="background:WhiteSmoke; color:black" | | ! style="background:WhiteSmoke; color:black" | 70 | ||
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! style="background:lightgrey; color:black" | 30 kV | ! style="background:lightgrey; color:black" | 30 kV | ||
| style="background:lightgrey; color:black" | | | style="background:lightgrey; color:black" | 100 | ||
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Revision as of 13:21, 9 June 2022
THIS PAGE IS UNDER CONSTRUCTION
Process information for the Raith eLINE Plus system
Table of dose to clear on Si substrate:
| Dose [µC/cm2] | AR-P 6200.09 (180 nm) | PMMA 950k | AR-N 8200.xx |
|---|---|---|---|
| 10 kV | 30 | ||
| 20 kV | 70 | ||
| 30 kV | 100 |