Specific Process Knowledge/Lithography/EBeamLithography/FirstEBL: Difference between revisions
| Line 29: | Line 29: | ||
=Resist coating= | =Resist coating= | ||
DTU Nanolab offers a few different standard resist as given in the table below. Typically layers of 50-500 nm are applied. The Gamma UV & E-beam coater has predefined recipes for various thickness of CSAR resist. For other thickness or other resist the more manual Lab Spin 2 or 3 coasters can be used. If using the Lab Spin coaters please refer to the table below for information on thickness versus spin speed and soft bake conditions. | DTU Nanolab offers a few different standard resist as given in the table below. Typically layers of 50-500 nm are applied. The Gamma UV & E-beam coater has predefined recipes for various thickness of CSAR resist. For other thickness or other resist the more manual Lab Spin 2 or 3 coasters can be used. If using the Lab Spin coaters please refer to the table below for information on thickness versus spin speed and soft bake conditions. | ||
For our example process we will use a standard 4” silicon wafer and coat it with 250 nm CSAR on the fully automatic Gamma E-beam & UV coater using recipe xxxx. | For our example process we will use a standard 4” silicon wafer and coat it with 250 nm CSAR on the fully automatic Gamma E-beam & UV coater using recipe xxxx. | ||