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Specific Process Knowledge/Lithography/EBeamLithography/FirstEBL: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
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Thope (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
2,179 edits
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DEFMODE 2                    Both deflectors are used (default)
DEFMODE 2                    Both deflectors are used (default)
RESIST 240                    A base dose of 240 µC/cm2 is used  
RESIST 240                    A base dose of 240 µC/cm2 is used  
SHOT A,16                     The shot step between individual beam shots is 4 nm - steps of 0.25 nm
SHOT A,16                     The shot step between individual beam shots is 4 nm - steps of 0.25 nm
OFFSET(0,0)                  An offset of 0 µm is applied in both X and Y
OFFSET(0,0)                  An offset of 0 µm is applied in both X and Y
      
      
END 8                           After exposure, cassette 8 will be remain on the stage
END 8                         After exposure, cassette 8 will be remain on the stage


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