Specific Process Knowledge/Lithography/EBeamLithography/FirstEBL: Difference between revisions
| Line 129: | Line 129: | ||
JDF 'myfirstebl',1 Layer block no. 1 of the jdf-file 'myfirstebl.jdf' is exposed | JDF 'myfirstebl',1 Layer block no. 1 of the jdf-file 'myfirstebl.jdf' is exposed | ||
ACC 100 Acceleration voltage of 100keV is used (can not be changed) | ACC 100 Acceleration voltage of 100keV is used (can not be changed) | ||
CALPRM '6na_ap5' | CALPRM '6na_ap5' The condition file 6na_ap5 is used, i.e. exposure at 6 nA | ||
DEFMODE 2 Both deflectors are used (default) | DEFMODE 2 Both deflectors are used (default) | ||
RESIST 240 A base dose of 240 µC/cm2 is used | RESIST 240 A base dose of 240 µC/cm2 is used | ||