Specific Process Knowledge/Lithography/EBeamLithography/FirstEBL: Difference between revisions

MAGAZIN    'MYFIRSTEBL'      ;The magazine name is MYFIRSTEBL; max. 20 capital letters

#8                            ;Cassette from auto stocker shelf 8 is used

%4A                          ;4" wafer in position A is exposed

JDF    'myfirstebl',1            ;Layer block no. 1 of the jdf-file 'myfirstebl.jdf' is exposed     

ACC 100                      ;Acceleration voltage of 100keV is used (can not be changed)

CALPRM '6na_ap5'            ;The condition file 6na_ap5 is used, i.e. exposure at 6 nA  

DEFMODE 2                    ;Both deflectors are used (default)

RESIST 240                    ;A base dose of 240 µC/cm2 is used  

SHOT A,16                      ;The shot step between individual beam shots is 4 nm - steps of 0.25 nm

OFFSET(0,0)                  ;An offset of 0 µm is applied in both X and Y

END 8                          ;After exposure, cassette 8 will be remain on the stage