Specific Process Knowledge/Lithography/EBeamLithography/FirstEBL: Difference between revisions

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 For our example job we will use the following files.
+<pre>
+___________________________________________________________________________
+MAGAZIN    'SIMPLE1'          The magazine name is SIMPLE1; max. 20 capital letters
+#6                            Cassette from slot no. 6 is used
+%4A                           Wafer of 4" in position A is exposed
+JDF     'simple',1            Layer block no. 1 of the jdf-file 'simple.jdf' is exposed
+ACC 100                       Acceleration voltage of 100keV is used
+CALPRM '0.2na_ap5'            The condition file 0.2na_ap5 is used
+DEFMODE 2                     Both deflectors are used (default)
+RESIST 240                    A dose of 240 µC/cm2 is used
+SHOT A,16                      The shot step between individual beam shots is 4 nm - steps of 0.25 nm
+OFFSET(0,0)                   An offset of 0 µm is applied in both X and Y
+END                           After exposure, the stage is left empty, i.e. the cassette is unloaded
+___________________________________________________________________________
+</pre>
 !SDF and JDF file content with line numbers!