Specific Process Knowledge/Lithography/Descum: Difference between revisions
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===[http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_3: Plasma asher 3]=== | ===[http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_3: Plasma asher 3]=== | ||
Plasma Asher 3 is specially used for control descum process after lithography. Please notice that you only can process one 4 inch wafer or one small sampel | Plasma Asher 3 is specially used for control descum process after lithography. Please notice that you only can process one 4 inch wafer or one small sampel at a time. | ||
Machine is | Machine is equipped with 2 gaslines: oxygen and nitrogen, but all tests run with oxygen as recommended by Diener. | ||
'''Ashing of AZ MiR701 resist''' | '''Ashing of AZ MiR701 resist''' | ||