Specific Process Knowledge/Lithography/ARN8200: Difference between revisions
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Exposure dose for AR-N 8200 is very dependent on Post Exposure Bake (PEB) temperature. A contrast curve for four different PEB processes were obtained with the following process parameters. | Exposure dose for AR-N 8200 is very dependent on Post Exposure Bake (PEB) temperature. A contrast curve for four different PEB processes were obtained with the following process parameters. | ||
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Hotplate temperatures are assumed surface temperatures based on the 0.90 correction factor in use on the hotplate. | Hotplate temperatures are assumed surface temperatures based on the 0.90 correction factor in use on the hotplate. | ||
The resulting resist structure height is mapped with Dektak XTa and plotted as a contrast curve below. It is apparent that the dose and contrast is very dependent on the PEB parameters. | The resulting resist structure height is mapped with Dektak XTa and plotted as a contrast curve below. It is apparent that the dose and contrast is very dependent on the PEB parameters. | ||