Specific Process Knowledge/Lithography/ARN8200: Difference between revisions
| Line 29: | Line 29: | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
|AR-N8200.06 | |AR-N8200.06 | ||
|LabSpin 2, 4000 rpm for 60s, softbake 10 min @ 150 degC | |LabSpin 2, 4000 rpm for 60s, softbake 10 min @ 150 degC, thickness is 105 nm | ||
|JBX9500, 60 nA, doses 100-1600 µC/cm2, 150 µm x 300 µm rectangles | |JBX9500, 60 nA, doses 100-1600 µC/cm2, 150 µm x 300 µm rectangles | ||
|Labspin 2 hotplate, 130, 150, 160 or 170 degC for 10 min | |Labspin 2 hotplate, 130, 150, 160 or 170 degC for 10 min | ||
Revision as of 09:39, 17 March 2022
AR-N 8200
AR-N 8200 is a negative E-beam resist from Allresist, it is also known as "Medusa 82". A product presentation from Allresist is available here AR-N8200 presentation.
Allresist also provides these processing guidelines.
Contrast curve
Exposure dose for AR-N 8200 is very dependent on Post Exposure Bake (PEB) temperature. A contrast curve for four different PEB processes were obtained with the following process parameters.
| AR-N 8200 Contrast Curve, Processed by THOPE, FEB 2022 | ||||
|---|---|---|---|---|
| Resist | Spin Coat | E-beam exposure | PEB | Development |
| AR-N8200.06 | LabSpin 2, 4000 rpm for 60s, softbake 10 min @ 150 degC, thickness is 105 nm | JBX9500, 60 nA, doses 100-1600 µC/cm2, 150 µm x 300 µm rectangles | Labspin 2 hotplate, 130, 150, 160 or 170 degC for 10 min | EBL development fumehood, 60 sec development in AR300-47:DIW (1:1), 30 sec rinse in DIW, nitrogen gun dry |
Hotplate temperatures are assumed surface temperatures based on the 0.90 correction factor in use on the hotplate.
