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Specific Process Knowledge/Lithography/ARN8200: Difference between revisions

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|AR-N8200.06 AllResist
|AR-N8200.06
|LabSpin E-5, 4000 rpm, 60s, softbaked 10 min @ 150 degC
|LabSpin 2, 4000 rpm for 60s, softbake 10 min @ 150 degC
|09-02-2016, JBX9500 E-2, 2nA aperture 5, doses 40-600 µC/cm2, 100 nm lines and 300 nm spaces
|JBX9500, 60 nA, doses 100-1600 µC/cm2, 150 µm x 300 µm rectangles
|11-02-2016, Fumehood D-2, AR-600-546, rinsed in IPA 60s.
|Labspin 2 hotplate, 130, 150, 160 or 170 degC for 10 min
|02-03-2016 AFM Icon, F-2, ScanAsyst in Air
|EBL development fumehood, 60 sec development in AR300-47:DIW (1:1), 30 sec rinse in DIW, nitrogen gun dry
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