Specific Process Knowledge/Lithography/Strip: Difference between revisions
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==Plasma Asher | ==Plasma Asher 3: Descum== | ||
[[Image:Plasma_Asher_6inch.jpg|300x300px|thumb|Plasma asher for removing AZ resist on 6" wafers: positioned in E-5]] | [[Image:Plasma_Asher_6inch.jpg|300x300px|thumb|Plasma asher for removing AZ resist on 6" wafers: positioned in E-5]] | ||
'''Feedback to this section''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Strip# | '''Feedback to this section''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_3 click here]''' | ||
The Plasma Asher | The Plasma Asher 3: Descum dedicated for resist descum i.e. removal of remains resist traces after development. It has a small chamber, so you can only load one 4 inch substrate ad time or few smaller pieces. | ||
In this machine, only O2 and N2 gases are used for processes | In this machine, only O2 and N2 gases are used for processes. | ||
The typical process parameters when operating the equipment: | The typical process parameters when operating the equipment: | ||
*Photeresist descum | |||
Pressure: 0.2 - 0.8mbar | |||
Gas: O2 | Gas: O2 | ||
Power: 50% - 100% | |||
Power: | Time: 1 -10 min., depending on photoresist type and thickness | ||
Time: | |||
The other materials have not been tested yet. | The other materials have not been tested yet. | ||
'''The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach= | '''The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=423 LabManager]''' | ||
===Process Information=== | ===Process Information=== | ||
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=Resist Strip= | =Resist Strip= | ||