Specific Process Knowledge/Lithography/Descum: Difference between revisions
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You can use different strategy planing your descum: you can change power settings or you can vary chamber pressure during descum. | You can use different strategy planing your descum: you can change power settings or you can vary chamber pressure during descum. | ||
Testing different power settings | ''Testing different power settings'' | ||
Recipe settings: | |||
Oxydgen: 5 sccm under process | Kept oxygen and pressure settings constant at Oxydgen: 5 sccm under process; Pressure: 0,2mbar and vary power. | ||
Pressure: 0,2mbar | |||
Experiment parameters: | Experiment parameters: | ||
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''Testing different pressure settings'' | |||
Recipe settings: | |||
Kept power setting constant at Power: 100% and vary oxydgen flow during process. | |||
Experiment parameters: | |||
{| {{table}} | |||
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| ||FW/REV|| C2/C1 || Oxydgen || Pressure | |||
|- | |||
|'''recipe 1'''|| 100/0 || 53/31 || 5 || 0,2 | |||
|- | |||
|'''recipe 2''' || 100/0 || 37/38 || 45 || 0,8 | |||
|- | |||
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'''Ashing of AZ5214E resist''' | '''Ashing of AZ5214E resist''' | ||