Specific Process Knowledge/Etch/ICP Metal Etcher/Chromium: Difference between revisions
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<gallery> | <gallery caption="Etchin glines in Cr with the Cr etch for x min x nm DUV resist" perrow="5" widths="400px" heights="300px"> | ||
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Revision as of 15:48, 1 March 2022
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Chromium etch in ICP metal - small substrate using carrier
The Chromium etch was carried out on the following substrate stack: 2" Si wafer with Cr laying in a 6" Si wafer with a 4" recess. The area outside the recess was covered by AZ resist. The work was carried out be Erol Zekovic @Nanotech and BGHE@nanolab
| Parameter | Cr etch |
|---|---|
| Cl2 (sccm) | 65 |
| O2 (sccm) | 15 |
| Pressure (mTorr) | 15 |
| Coil power (W) | 300 |
| Platen power (W) | 15 |
| Temperature (oC) | 50 |
| Spacers (mm) | 100 |
| Etch rate (nm/min) | ~32 (Date: 2014-08-13) |
| Zep520A resist selectivity | NA |
| Comment | Was masked by capton tape |
- Etchin glines in Cr with the Cr etch for x min x nm DUV resist
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Chromium etch in ICP metal on a thick glass substrate
The Chromium etch has ONLY been carried out on the following substrate stack: The Chromium is sputter deposited onto a 2" quartz wafer and patterned by e-beam with Zep520A resist. This 2" QZ wafer is bonded with crystal bond to a 65mmx65mm quartz plate with the thickness: 6.35mm. This QZ plate is bonded to a Si wafer.
| Parameter | Cr etch |
|---|---|
| Cl2 (sccm) | 65 |
| O2 (sccm) | 15 |
| Pressure (mTorr) | 15 |
| Coil power (W) | 300 |
| Platen power (W) | 15 |
| Temperature (oC) | 50 (no back side cooling) |
| Spacers (mm) | 100 |
| Etch rate (nm/min) | ~14 |
| Zep520A resist selectivity | ~0.9 |
| Comment | . |